Two-dimensional (2D) layered materials may spawn a revolution in the field of solid-state micro/nano-electronic devices and circuits for extending the Moore’s law and complementing the CMOS technology. In our group, we employ 2D layered materials like graphene, molybdenum disulfide, and hexagonal boron nitride to fabricate advanced electronic devices and circuits.

Memristive devices, which exhibit multiple resistive states, are being commercialized as electronic memory, and recent studies have shown that they may also be exploited for advanced computation, data security and mobile communication. In our group, we fabricate crossbar arrays of memristive devices for different applications using advanced nanomaterials.

We offer advanced characterization to our collaborators. At the Core Labs of KAUST, we have a wide range of facilities for atomic-scale morphological and chemical characterization of all kinds of nanomaterials, including TEM with EDS and EELS, SEM with FIB, AFM with CAFM and SThM, NanoSIMS, AES, XRD, and many others. We also get support from an expert team of scientists in charge of them.