Effect of defects on electrical properties of 2D-materials based memristors.
Morphological characterization with atomic force microscopy
Electrical characterization with semiconductor parameter analyzer: Voltage to breakdown and variability of resistive switching.
Low leakage currents from Pt electrodes in h-BN based memristors.
Investigation of difference in the metal electrodes
Mechanism of forming conductive filaments by simulation
Selected Publications
Shen, Y., Zheng, W., Zhu, K., Xiao, Y., Wen, C., Liu, Y., Jing, X. and Lanza, M., 2021. Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect. Advanced Materials, 33(41), p.2103656.
Zheng, W., Saiz, F., Shen, Y., Zhu, K., Liu, Y., McAleese, C., Conran, B., Wang, X. and Lanza, M., 2021. Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology.Advanced Materials, p.2104138.
Krishnaprasad, A., Dev, D., Han, S.S., Shen, Y., Chung, H.S., Bae, T.S., Yoo, C., Jung, Y., Lanza, M. and Roy, T., 2022. MoS2 synapses with ultra-low variability and their implementation in Boolean logic.ACS nano, 16(2), pp.2866-2876.
Education
Ph.D., Material Science and Engineering, KAUST, Thuwal, Saudi Arabia, Current position