Yaqing Shen


PhD student


Building 3 - Desk 2260-WS08

Research Interests

  • Effect of defects on electrical properties of 2D-materials based memristors.
    • Morphological characterization with atomic force microscopy
    • Electrical characterization with semiconductor parameter analyzer: Voltage to breakdown and variability of resistive switching. 
  • Low leakage currents from Pt electrodes in h-BN based memristors. 
    • Investigation of difference in the metal electrodes
    • Mechanism of forming conductive filaments by simulation 

Selected Publications

  • Shen, Y., Zheng, W., Zhu, K., Xiao, Y., Wen, C., Liu, Y., Jing, X. and Lanza, M., 2021. Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect. Advanced Materials, 33(41), p.2103656.
  • Zheng, W., Saiz, F., Shen, Y., Zhu, K., Liu, Y., McAleese, C., Conran, B., Wang, X. and Lanza, M., 2021. Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology. Advanced Materials, p.2104138.
  • Krishnaprasad, A., Dev, D., Han, S.S., Shen, Y., Chung, H.S., Bae, T.S., Yoo, C., Jung, Y., Lanza, M. and Roy, T., 2022. MoS2 synapses with ultra-low variability and their implementation in Boolean logic. ACS nano, 16(2), pp.2866-2876.


  • Ph.D., Material Science and Engineering, KAUST, Thuwal, Saudi Arabia, Current position
  • M.Sc., Materials Science, Soochow University, Suzhou, China, 2022


  • The highest-rank scholarship (top 5%) 2019
  • The 1st-rank scholarship 2020
  • National scholarship 2021

KAUST Affiliations

Research Interests Keywords

Two-dimensional materials Memristor Hexagonal Boron Nitride