Advanced h-BN/Metal Gate Stacks for 2D-materials Based Transistors.
Leakage current and dielectric strengths of metal/h-BN stacks
Transistor performance and reliability
Effect of defects on electrical properties of 2D-materials based memristors.
Morphological characterization with atomic force microscopy
Electrical characterization with semiconductor parameter analyzer: Voltage to breakdown and variability of resistive switching.
Low leakage currents from Pt electrodes in h-BN based memristors.
Investigation of difference in the metal electrodes
Mechanism of forming conductive filaments by simulation
Selected Publications
Yaqing Shen, Kaichen Zhu, Yiping Xiao, Dominic Waldhör, Abdulrahman H. Basher, Theresia Knobloch, Sebastian Pazos, Xianhu Liang, Wenwen Zheng, Yue Yuan, Juan B. Roldan, Udo Schwingenschlögl, He Tian, Huaqiang Wu, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing, Saptarshi Das, Tibor Grasser, Mario Lanza*, “Advanced h-BN/Metal Gate Stacks for 2D Materials Based Transistors”, Nature Electronics, 1-12, 2024.
Yaqing Shen, Wenwen Zheng, Kaichen Zhu, Yiping Xiao, Chao Wen, Yingwen Liu, Xu Jing, Mario Lanza*, “Variability and yield in h-BN based memristive circuits: the role of each type of defect”, Advanced Materials, 33(41), 2103656, 2021.
Kaichen Zhu, Sebastian Pazos, Fernando Aguirre, Yaqing Shen, Yue Yuan, Wenwen Zheng, Osamah Alharbi, Marco A. Villena, Bin Fang, Xinyi Li, Alessandro Milozzi, Matteo Farronato, Miguel Muñoz-Rojo, Tao Wang, Ren Li, Hossein Fariborzi, Juan B. Roldan, Guenther Benstetter, Xixiang Zhang, Husam Alshareef, Tibor Grasser, Huaqiang Wu, Daniele Ielmini, Mario Lanza*, “Hybrid 2D/CMOS microchips for memristive applications”, Nature, 618(7963), 57-62, 2023.
Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdu Tirado, Andres Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluis Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza*, “Memristive circuits based on multilayer hexagonal boron nitride for radiofrequency and millimetre wave applications” Nature Electronics, 1-10, 2024.
Wenwen Zheng, Bin Yuan, Marco A. Villena, Kaichen Zhu, Sebastian Pazos, Yaqing Shen, Yue Yuan, Chen Liu, Xiaowen Zhang, Xixiang Zhang, Mario Lanza*, "The origin and mitigation of defects induced by metal evaporation in 2D materials." Materials Science and Engineering: R: Reports, 160, 100831, 2024.
Sebastian Pazos, Thales Becker, Marco Antonio Villena, Wenwen Zheng, Yaqing Shen, Yue Yuan, Osamah Alharbi, Kaichen Zhu, Juan Bautista Roldán, Gilson Wirth, Felix Palumbo, Mario Lanza*, “High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors”, Advanced Functional Materials, 34(15) , 2213816, 2024.
Fei Hui*, Conghui Zhang, Huanhuan Yu, Tingting Han, Jonas Weber, Yaqing Shen, Yiping Xiao, Xiaohong Li, Zhijun Zhang, Peisong Liu*. “Self-Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High-Performance Memristors”, Advanced Functional Materials, 34(15), 2302073, 2024.
D. Maldonado, A. Cantudo, F. M. Gómez-Campos, Yue Yuan, Yaqing Shen, Wenwen Zheng, Mario Lanza and J. B. Roldán, “3D Simulation of Conductive Nanofilaments in Multilayer H-BN Memristors via a Circuit Breaker Approach”, Materials Horizons, 11(4), 949-957, 2024.
J. B. Roldán, A. Cantudo, J. J. Torres, D. Maldonado, Yaqing Shen, Wenwen Zheng, Yue Yuan and Mario Lanza*, “Stochastic Resonance in 2D Materials Based Memristors”, npj 2D Materials and Applications, 8(1), 7, 2024.
Mario Lanza, Sebastian Pazos, Kaichen Zhu, Yue Yuan, Yaqing Shen, Osamah Alharbi, Wenwen Zheng, Xixiang Zhang and Husam N. Alshareef, “Back-End-of-Line Integration of 2D Materials on Silicon Microchips”, in 2023 International Electron Devices Meeting (IEDM), 1-4, 2023.
Sebastian Pazos, Wenwen Zheng, Tommaso Zanotti, Fernando Aguirre, Thales Becker, Yaqing Shen, Kaichen Zhu, Yue Yuan, Gilson Wirth, Francesco Maria Puglisi, Juan Bautista Roldán, Felix Palumbob and Mario Lanza, “Hardware Implementation of a True Random Number Generator Integrating a Hexagonal Boron Nitride Memristor with a Commercial Microcontroller”, Nanoscale, 15(5), 2171-2180, 2023.
Juan B. Roldan, David Maldonado, C. Aguilera-Pedregosa, Francisco J. Alonso, Yiping Xiao, Yaqing Shen, Wenwen Zheng, Yue Yuan and Mario Lanza, “Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices”, IEEE Transactions on Electron Devices, 70(4), 1533-1539, 2023.
J. B. Roldán, D. Maldonado, A. Cantudo, Yaqing Shen, Wenwen Zheng, and M. Lanza, “Conductance Quantization in H-BN Memristors”, Applied Physics Letters, 122(20), 2023.
Wenwen Zheng, Fernan Saiz, Yaqing Shen, Kaichen Zhu, Yingwen Liu, Clifford McAleese, Ben Conran, Xiaochen Wang, Mario Lanza*, “Defect-Free Metal Deposition on 2D Materials via Inkjet Printing Technology”, Advanced Materials, 34(48), 2104138, 2022.
Adithi Krishnaprasad, Durjoy Dev, Sang Sub Han, Yaqing Shen, Hee-Suk Chung, Tae-Sung Bae, Changhyeon Yoo, Yeonwoong Jung, Mario Lanza, and Tania Roy*, “MoS2 Synapses with Ultra-Low Variability and Their Implementation in Boolean Logic”, ACS Nano, 16(2), 2866-2876, 2022.
Juan B. Roldan, David Maldonado, Cristina Aguilera-Pedregosa, Enrique Moreno, Fernando Aguirre, Rocío Romero-Zaliz, Angel M. García-Vico, Yaqing Shen and Mario Lanza, “Spiking Neural Networks Based on Two-Dimensional Materials”, npj 2D Materials and Applications, 6(1), 63, 2022.
Education
Ph.D., Material Science and Engineering, KAUST, Thuwal, Saudi Arabia, Current position