Two types of h-BN are compared by long-term measurement and gate leakage test
Annealing process is conduct to improve the performance of GFETs
The origin and mitigation of defects induced by metal evaporation in 2D materials
Metal evaporation on h-BN, MoS2
Effect of the vacuum level, deposition rate, evaporator machine, different metal deposition
Simulation on origin of defect-mitigation in vacuum
Defect-free metal deposition on 2D materials via inkjet printing technology
Comparison of metal deposition on 2D materials by evaporation, transfer method and inkjet printing
Atomic simulation of defect generation in multilayer h-BN
Random telegraph noise of Ag(inkjet printed)/h-BN/Au device
Selected Publications
W. Zheng, B. Yuan, M. A. Villena, K. Zhu, S. Pazos, Y. Shen, Y. Yuan, Y. Ping, C. Liu, X. Zhang, X. Zhang, M. Lanza, Materials Science and Engineering: R: Reports 2024, 160, 100831.
S. Pazos, Y. Shen, H. Zhang, J. Verdú, A. Fontana, W. Zheng, Y. Yuan, O. Alharbi, Y. Ping, E. Guerrero, L. Acosta, P. De Paco, D. Psychogiou, A. Shamim, D. Akinwande, M. Lanza, Nat Electron 2024, 7, 557.
J. B. Roldán, A. Cantudo, J. J. Torres, D. Maldonado, Y. Shen, W. Zheng, Y. Yuan, M. Lanza, npj 2D Mater Appl 2024, 8, 7.
D. Maldonado, A. Cantudo, F. M. Gómez-Campos, Y. Yuan, Y. Shen, W. Zheng, M. Lanza, J. B. Roldán, Mater. Horiz. 2024, 11, 949.
S. Pazos, T. Becker, M. A. Villena, W. Zheng, Y. Shen, Y. Yuan, O. Alharbi, K. Zhu, J. B. Roldán, G. Wirth, F. Palumbo, M. Lanza, Adv Funct Materials 2024, 34, 2213816.
M. Lanza, S. Pazos, K. Zhu, Y. Yuan, Y. Shen, O. Alharbi, W. Zheng, X. Zhang, H. N. Alshareef, in 2023 International Electron Devices Meeting (IEDM), IEEE, San Francisco, CA, USA, 2023, pp. 1–4.
J. B. Roldán, D. Maldonado, A. Cantudo, Y. Shen, W. Zheng, M. Lanza, Applied Physics Letters 2023, 122, 203502.
K. Zhu, S. Pazos, F. Aguirre, Y. Shen, Y. Yuan, W. Zheng, O. Alharbi, M. A. Villena, B. Fang, X. Li, A. Milozzi, M. Farronato, M. Muñoz-Rojo, T. Wang, R. Li, H. Fariborzi, J. B. Roldan, G. Benstetter, X. Zhang, H. N. Alshareef, T. Grasser, H. Wu, D. Ielmini, M. Lanza, Nature 2023, 618, 57.
S. Pazos, W. Zheng, T. Zanotti, F. Aguirre, T. Becker, Y. Shen, K. Zhu, Y. Yuan, G. Wirth, F. M. Puglisi, J. B. Roldán, F. Palumbo, M. Lanza, Nanoscale 2023, 15, 2171.
J. B. Roldan, D. Maldonado, C. Aguilera-Pedregosa, F. J. Alonso, Y. Xiao, Y. Shen, W. Zheng, Y. Yuan, M. Lanza, IEEE Trans. Electron Devices 2023, 70, 1533.
W. Zheng, F. Saiz, Y. Shen, K. Zhu, Y. Liu, C. McAleese, B. Conran, X. Wang, M. Lanza, Advanced Materials 2022, 34, 2104138.
Y. Shen, W. Zheng, K. Zhu, Y. Xiao, C. Wen, Y. Liu, X. Jing, M. Lanza, Advanced Materials 2021, 33, 2103656.
C. Wen, X. Li, T. Zanotti, F. M. Puglisi, Y. Shi, F. Saiz, A. Antidormi, S. Roche, W. Zheng, X. Liang, J. Hu, S. Duhm, J. B. Roldan, T. Wu, V. Chen, E. Pop, B. Garrido, K. Zhu, F. Hui, M. Lanza, Advanced Materials 2021, 33, 2100185.
Y. Xiao, W. Zheng, B. Yuan, C. Wen, M. Lanza, Crystal Research and Technology 2021, 56, 2100056.
Education
Ph.D., Material Science and Engineering, KAUST, Thuwal, Saudi Arabia, Current position
M.Sc., Physics, Soochow University, Suzhou, China 2022.
Awards
The highest-rank scholarship (top 5%, 2019)
The outstanding graduate student of Soochow University