Sebastian Matias Pazos


Postdoctoral fellow


Building 3 - Desk 2260-WS01

Research Interests

With electronic device dimensions downscaling to prohibitive values, new materials show promise to improve performance and power consumption. Much improvement is required to dethrone silicon-based technologies. Integrating the best of both worlds is an interesting alternative with multiple challenges. Interests include device and circuit reliability, RF/mmW applications, CMOS circuits, sensors and neuromorphic applications through monolithic integration of novel materials into silicon platforms.

Selected Publications

  • Lanza, M., Waser, R., Ielmini, D., Yang, J. J., Goux, L., Suñe, J., Kenyon, A. J., Mehonic, A., Spiga, S., Rana, V., Wiefels, S., Menzel, S., Valov, I., Villena, M. A., Miranda, E., Jing, X., Campabadal, F., Gonzalez, M. B., Aguirre, F., Palumbo, F., Zhu, K., Roldan, J. B., Puglisi, F. M., Larcher, L., Hou, T-H., Prodromakis, T., Yang, Y., Huang, P., Wan, T., Chai, Y., Pey, K. L., Raghavan, N., Dueñas, S., Wang, T., Xia, Q., Pazos, S., 2021. Standards for the characterization of endurance in resistive switching devices. ACS nano, 15(11), pp.17214-17231.
  • Pazos, S., Aguirre, F., Palumbo, F. and Silveira, F., 2019. Reliability-aware design space exploration for fully integrated RF CMOS PA. IEEE Transactions on Device and Materials Reliability, 20(1), pp.33-41.
  • Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F. and Lanza, M., 2020. A review on dielectric breakdown in thin dielectrics: silicon dioxide, high‐k, and layered dielectrics. Advanced Functional Materials, 30(18), p.1900657.
  • Pazos, S.M., Aguirre, F.L., Palumbo, F. and Silveira, F., 2020. Hot-carrier-injection resilient RF power amplifier using adaptive bias. Microelectronics Reliability, 114, p.113912.
  • Aguirre, F.L., Pazos, S.M., Palumbo, F., Suñé, J. and Miranda, E., 2020. Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. IEEE Access, 8, pp.202174-202193.
  • Pazos, S.M., Aguirre, F.L., Tang, K., McIntyre, P. and Palumbo, F., 2018. Lack of correlation between CV hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks. Journal of Applied Physics, 124(22), p.224102.
  • Pazos, S., Aguirre, F., Miranda, E., Lombardo, S. and Palumbo, F., 2017. Comparative study of the breakdown transients of thin Al2O3 and HfO2  films in MIM structures and their connection with the thermal properties of materials. Journal of Applied Physics, 121(9), p.094102.
  • Aguirre, F.L., Padovani, A., Ranjan, A., Raghavan, N., Vega, N., Müller, N., Pazos, S.M., Debray, M., Molina, J., Pey, K.L. and Palumbo, F., 2019, March. Spatio-Temporal Defect Generation Process in Irradiated HfO 2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. In 2019 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-8). IEEE.
  • Pazos, S.M., Boyeras Baldomá, S., Aguirre, F.L., Krylov, I., Eizenberg, M. and Palumbo, F., 2020. Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study. Journal of Applied Physics, 127(17), p.174101.
  • Fontana, A., Pazos, S., Aguirre, F., Vega, N., Müller, N., De la Fourniere, E., Silveira, F., Debray, M.E. and Palumbo, F., 2019. Pulse quenching and charge-sharing effects on heavy-ion microbeam induced ASET in a full-custom CMOS OpAmp. IEEE Transactions on Nuclear Science, 66(7), pp.1473-1482.


  • Ph.D., Engineering (Electronics), UTN, Buenos Aires, Argentina, 2021
  • Dipl. (B.Sc/M.Sc), Electronics Engineering, UTN, Buenos Aires, Argentina, 2015

Professional Profile

  • 2022 - current: Post-doctoral Fellow, PSE, KAUST, Thuwal, Saudi Arabia
  • 2021 - 2022: Post-doctoral Fellow, CONICET, Buenos Aires, Argentina
  • 2016 - 2021: Ph.D. Fellow, CONICET, Buenos Aires, Argentina
  • 2018 - 2021: Interim Adjunct Professor, UTN, Buenos Aires, Argentina
  • 2011 - 2021: Teaching Assistant, UTN, Buenos Aires, Argentina
  • 2012 - 2015: Lab consultant, UTN, Buenos Aires, Argentina


  • 2020-2021 IEEE Electron Devices Society Region 9 Outstanding Student Paper Award
  • IRPS 2019 Best Paper Award
  • SBMicro 2019 Best Paper Award
  • PRIME-LA 2017 Best Paper Award

Research Interests Keywords

CMOS design RF Neuromorphic Electrical characterization Integration Electron devices