Sebastian Matias Pazos

Members

Research Scientist

Location:

Building 3 - Desk 2260-WS01

Social Profile:

Research Interests

With electronic device dimensions downscaling to prohibitive values, new materials show promise to improve performance and power consumption. Much improvement is required to dethrone silicon-based technologies. Integrating the best of both worlds is an interesting alternative with multiple challenges. Interests include device and circuit reliability, RF/mmW applications, CMOS circuits, sensors and neuromorphic applications through monolithic integration of novel materials into silicon platforms.

Selected Publications

  • S. Pazos, Y. Shen, H. Zhang, J. Verdu, A. Fontana, W. Zheng, Y. Yuan, O. Alharbi, Y. Ping, E. Guerrero, L. Acosta, P. de Paco, D. Psychogiou, A. Shamim, D. Akinwande, and M. Lanza. “Memristive circuits based on two-dimensional layered hexagonal boron nitride for radiofrequency and millimetre wave applications”. In: Nature Electronics 7.7 (July 2024). Publisher: Nature Publishing Group, pp. 557–566. issn: 2520-1131.
  • S. Pazos, X. Xu, T. Guo, K. Zhu, H. Alshareef, and M. Lanza. “Solution-processed memristors: performance and reliability”. In: Nature Reviews Materials 9.5 (Apr. 2024). Publisher: Nature Publishing Group, pp. 358–373. issn: 2058-8437.
  • K. Zhu, S. Pazos, F. Aguirre, Y. Shen, Y. Yuan, W. Zheng, O. Alharbi, M.A.Villena, B. Fang, X. Li, A. Milozzi, M. Farronato, M. Muñoz-Rojo, T. Wang, R. Li, H. Fariborzi, J.B. Roldán, G. Benstetter, X. Zhang, H. Alshareef, T. Grasser, H. Wu, D. Ielmini, and M. Lanza. “Hybrid 2D/CMOS microchips for memristive applications”. In: Nature 618.7963 (June 2023). These authors contributed equally, pp. 57–62. issn: 1476-4687. doi: 10.1038/s41586-023-05973-1.
  • S. Pazos, T. Becker, M.A. Villena, W. Zheng, Y. Shen, Y. Yuan, O. Alharbi, K. Zhu, J.B. Roldán, G. Wirth, F. Palumbo, and M. Lanza. “High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors”. In: Advanced Functional Materials (Feb. 2023), p. 2213816. issn: 1616-3028. doi: 10.1002/adfm.202213816.
  • S. Pazos, W. Zheng, T. Zanotti, F.L. Aguirre, T. Becker, Y. Shen, K. Zhu, Y. Yuan, G. Wirth, F.M. Puglisi, J. B. Roldan, F. Palumbo, and M. Lanza. “Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller”. In: Nanoscale (Jan. 2023). issn: 2040-3372. doi: 10.1039/D2NR06222D.
  • Lanza, M., Waser, R., Ielmini, D., Yang, J. J., Goux, L., Suñe, J., Kenyon, A. J., Mehonic, A., Spiga, S., Rana, V., Wiefels, S., Menzel, S., Valov, I., Villena, M. A., Miranda, E., Jing, X., Campabadal, F., Gonzalez, M. B., Aguirre, F., Palumbo, F., Zhu, K., Roldan, J. B., Puglisi, F. M., Larcher, L., Hou, T-H., Prodromakis, T., Yang, Y., Huang, P., Wan, T., Chai, Y., Pey, K. L., Raghavan, N., Dueñas, S., Wang, T., Xia, Q., Pazos, S., 2021. Standards for the characterization of endurance in resistive switching devices. ACS nano, 15(11), pp.17214-17231.
  • Pazos, S., Aguirre, F., Palumbo, F. and Silveira, F., 2019. Reliability-aware design space exploration for fully integrated RF CMOS PA. IEEE Transactions on Device and Materials Reliability, 20(1), pp.33-41.
  • Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F. and Lanza, M., 2020. A review on dielectric breakdown in thin dielectrics: silicon dioxide, high‐k, and layered dielectrics. Advanced Functional Materials, 30(18), p.1900657.
  • Pazos, S.M., Aguirre, F.L., Palumbo, F. and Silveira, F., 2020. Hot-carrier-injection resilient RF power amplifier using adaptive bias. Microelectronics Reliability, 114, p.113912.
  • Aguirre, F.L., Pazos, S.M., Palumbo, F., Suñé, J. and Miranda, E., 2020. Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. IEEE Access, 8, pp.202174-202193.
  • Pazos, S.M., Aguirre, F.L., Tang, K., McIntyre, P. and Palumbo, F., 2018. Lack of correlation between CV hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks. Journal of Applied Physics, 124(22), p.224102.
  • Pazos, S., Aguirre, F., Miranda, E., Lombardo, S. and Palumbo, F., 2017. Comparative study of the breakdown transients of thin Al2O3 and HfO2  films in MIM structures and their connection with the thermal properties of materials. Journal of Applied Physics, 121(9), p.094102.
  • Aguirre, F.L., Padovani, A., Ranjan, A., Raghavan, N., Vega, N., Müller, N., Pazos, S.M., Debray, M., Molina, J., Pey, K.L. and Palumbo, F., 2019, March. Spatio-Temporal Defect Generation Process in Irradiated HfO 2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. In 2019 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-8). IEEE.
  • Pazos, S.M., Boyeras Baldomá, S., Aguirre, F.L., Krylov, I., Eizenberg, M. and Palumbo, F., 2020. Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study. Journal of Applied Physics, 127(17), p.174101.
  • Fontana, A., Pazos, S., Aguirre, F., Vega, N., Müller, N., De la Fourniere, E., Silveira, F., Debray, M.E. and Palumbo, F., 2019. Pulse quenching and charge-sharing effects on heavy-ion microbeam induced ASET in a full-custom CMOS OpAmp. IEEE Transactions on Nuclear Science, 66(7), pp.1473-1482.

Education

  • Ph.D., Engineering (Electronics), UTN, Buenos Aires, Argentina, 2021
  • Dipl. (B.Sc/M.Sc), Electronics Engineering, UTN, Buenos Aires, Argentina, 2015

Professional Profile

  • 2024 - current: Research scientist, PSE, KAUST, Thuwal, Saudi Arabia
  • 2022 - 2024: Post-doctoral Fellow, PSE, KAUST, Thuwal, Saudi Arabia
  • 2021 - 2022: Post-doctoral Fellow, CONICET, Buenos Aires, Argentina
  • 2016 - 2021: Ph.D. Fellow, CONICET, Buenos Aires, Argentina
  • 2018 - 2021: Interim Adjunct Professor, UTN, Buenos Aires, Argentina
  • 2011 - 2021: Teaching Assistant, UTN, Buenos Aires, Argentina
  • 2012 - 2015: Lab consultant, UTN, Buenos Aires, Argentina

Awards

  • 2020-2021 IEEE Electron Devices Society Region 9 Outstanding Student Paper Award
  • IRPS 2019 Best Paper Award
  • SBMicro 2019 Best Paper Award
  • PRIME-LA 2017 Best Paper Award

KAUST Affiliations

Research Interests Keywords

CMOS design RF Neuromorphic Electrical characterization Integration Electron devices