Osamah Alharbi

Members

PhD candidate

Location:

Building 3 - Desk 2260-WS05

Social Profile:

Research Interests

Osamah’s research focuses on investigating the resistive switching phenomenon in different materials, the design and fabrication of memristors and memeristive crossbar arrays based on the Metal-Insulator-Metal (MIM) architecture with industry-compatible techniques. Also, he studies the applicability and use of building memristive artificial neural networks (ANNs).

Selected Publications

  • Osamah Alharbi, Sebastian Pazos, Kaichen Zhu, Fernando Aguirre, Yue Yuan, Xinyi Li, Huaqiang Wu, Mario Lanza, Integration of Ag-based threshold switching devices in silicon microchips, Materials Science and Engineering: R: Reports, Volume 161, 2024.
  • Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande & Mario Lanza. Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications. Nat Electron 7, 557–566 (2024).
  • Fernando Aguirre, Abu Sebastian, Manuel Le Gallo, Wenhao Song, Tong Wang, J. Joshua Yang, Wei Lu, Meng-Fan Chang, Daniele Ielmini, Yuchao Yang, Adnan Mehonic, Anthony Kenyon, Marco A. Villena, Juan B. Roldán, Yuting Wu, Hung-Hsi Hsu, Nagarajan Raghavan, Jordi Suñé, Enrique Miranda, Ahmed Eltawil, Gianluca Setti, Kamilya Smagulova, Khaled N. Salama, Olga Krestinskaya, Xiaobing Yan, Kah-Wee Ang, Samarth Jain, Sifan Li, Osamah Alharbi, Sebastian Pazos & Mario Lanza. Hardware implementation of memristor-based artificial neural networks. Nat Commun 15, 1974 (2024).
  • M. Lanza, S. Pazos, K. Zhu, Y. Yuan, Y. Shen, O. Alharbi, W. Zheng, X. Zhang, H. N. Alshareef, "Back-end-of-line integration of 2D materials on silicon microchips," 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023.
  • Kaichen Zhu, Sebastian Pazos, Fernando Aguirre, Yaqing Shen, Yue Yuan, Wenwen Zheng, Osamah Alharbi, Marco A Villena, Bin Fang, Xinyi Li, Alessandro Milozzi, Matteo Farronato, Miguel Muñoz-Rojo, Tao Wang, Ren Li, Hossein Fariborzi, Juan B Roldan, Guenther Benstetter, Xixiang Zhang, Husam N Alshareef, Tibor Grasser, Huaqiang Wu, Daniele Ielmini, Mario Lanza. Hybrid 2D–CMOS microchips for memristive applications. Nature 618, 57–62 (2023).
  • Pazos, S., Becker, T., Villena, M.A., Zheng, W., Shen, Y., Yuan, Y., Alharbi, O., Zhu, K., Roldan, J.B., Wirth, G., Palumbo, F., Lanza, M. (2023). High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors. Advanced Functional Materials. 
  • O. Y. Al-Harbi, N. S. Al-Ghamdi, M. A. Al-Absi and S. R. Al-Batati, "CMOS RF-DC Convertor for RF Wireless Energy Harvesting Based on Threshold Voltage Compensation," 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), Genting Highland, Pahang, Malaysia, 2019.

Education

  • Ph.D., Material Science and Engineering, KAUST, Thuwal, Saudi Arabia, Current position
  • M.Sc., Material Science and Engineering, KAUST, Thuwal, Saudi Arabia, 2022
  • B.Sc., Electrical Engineering, KFUPM, Dhahran, Saudi Arabia, 2019
  • Non-degree exchange year, Electrical and Computer Engineering, University of Florida, USA, 2017-2018

Professional Profile

  • 2021 - current: Graduate-level researcher, Material Science and Engineering, PSE, KAUST, Thuwal, Saudi Arabia
  • 2019 - 2021: Project Engineer, Offshore projects management department, Saudi Aramco, Dhahran, Saudi Arabia

Awards

  • Saudi Aramco fellowship for young engineers – 2019
  • Saudi ministry of education scholarship to study abroad – 2017

KAUST Affiliations

Research Interests Keywords

Resistive switching Memristor RRAM Memristive neural networks Neuromorphic Spiking neural networks