Kaichen Zhu

Members

Postdoctoral fellow

Location:

Building 3 - Desk 2260-WS04

Social Profile:

Research Interests

Dr. Zhu’s research focuses on the integration of 2D materials and CMOS microchips for memristive applications, especially using hexagonal boron nitride (h-BN). He is committed to the industrialization of 2D materials and memristors, so his interests include the wafer-scalable methods to process 2D materials, the fabrication of 2D materials based integrated circuits and their integration into the existing silicon-based CMOS platform. 

Selected Publications

  • Zhu, K., Pazos, S., Aguirre, F., Shen, Y., Yuan, Y., Zheng, W., Alharbi, O., Villena, M. A., Fang, B., Li, X., Milozzi, A., Farronato, M., Muñoz-Rojo, M., Wang, T., Li, R., Fariborzi, H., Roldan, J. B., Benstetter, G., Zhang, X., Alshareef, H., Grasser, T., Wu, H., Ielmini, D., Lanza, M., 2023. Hybrid 2D/CMOS microchips for memristive applications. Nature, 618, pp.57-62.
  • Zhu, K., Wen, C., Aljarb, A. A., Xue, F., Xu, X., Tung, V., Zhang, X., Alshareef, H. N., Lanza, M., 2021. The development of integrated circuits based on two-dimensional materials. Nature Electronics, 4, pp.775-785.
  • Zhu, K., Yuan, B., Liang, X., Jing, X., Wen, C., Villena, M. A., Lanza, M., 2019. Graphene-boron nitride-graphene cross-point memristors with three stable resistive states. ACS Applied Materials & Interfaces, 11, pp.37999-38005.
  • Zhu, K., Mahmoodi, M. R., Fahimi, Z., Xiao, Y., Wang, T., Bukvišová, K., Kolíbal, M., Roldan, J. B., Perez, D., Aguirre, F., Lanza, M., 2022. Memristors with initial low-resistive state for efficient neuromorphic systems. Advanced Intelligent Systems, 4, p.2200001.
  • Zhu, K., Vescio, G., González-Torres, S., López-Vidrier, J., Frieiro, J. L., Pazos, S., Jing, X., Gao, X., Wang, S., Ascorbe-Muruzábal, J., Ruiz-Fuentes, J. A., Cirera, A., Garrido, B., Lanza, M., 2023. Inkjet-printed h-BN memristors for hardware security. Nanoscale, 15, pp.9985-9992.
  • Zhu, K., Liang, X., Yuan, B., Villena, M. A., Wen, C., Wang, T., Chen, S., Lanza, M., Hui, F., Shi, Y., 2019. Tristate resistive switching in heterogenous van der Waals dielectric structures. IEEE International Reliability Physics Symposium (IRPS).

Education

  • Ph.D., Nanoscience, University of Barcelona, Spain, 2023
  • M.Sc., Physics, Soochow University, China, 2020
  • B.Sc., Nano-materials and Technology, Soochow University, China, 2017

Awards

  • 2020 International Corroboration Scholarship, Soochow University
  • IWOFC 2018, Best Poster Presentation Award, 2nd International Workshop on Future Computing 
  • 2017-2019 Postgraduate Academic Scholarship, Soochow University

KAUST Affiliations

Research Interests Keywords

Nanoelectronics 2D materials Memristors Transistor